SI6469DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si6469DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
24
V_GS = 5 thru 2,5 V
24
18
2V
18
Transfer Characteristics
T_C = –55_C
25_C
125_C
12
1.5 V
6
1V
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10
0.08
0.06
V_GS = 1.8 V
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0
0
6
12
18
24
30
I_D – Drain Current (A)
4.5
Gate Charge
V_DS = 6 V
3.6
I_D = 6.0 A
2.7
1.8
0.9
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
Document Number: 70858
S-60717—Rev. A, 01-Feb-99
12
6
0
0
4000
3200
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Capacitance
C_iss
2400
1600
800
C_oss
C_rss
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
1.6 ^{On-Resistance vs. Junction Temperature}
1.4
V_GS = 4.5 V
I_D = 6.0 A
1.2
1.0
0.8
0.6
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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