SI6467DQ Datasheet, PDF (4/4 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

Si6467DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
0.08
10
0.06
0.04
T_J = 25_C
0.02
I_D = 8.0 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
Threshold Voltage
0.5
0.4
I_D = 250 mA
0.3
0.2
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
60
50
40
30
20
10
0
0.01
Single Pulse Power
0.1
1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
2-4
Document Number: 70829
S-59526—Rev. A, 19 Oct-98