SI6467DQ Datasheet, PDF (3/4 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

Si6467DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 5 thru 2 V
24
24
Transfer Characteristics
18
1.5 V
12
6
0
0
0.05
1V
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
18
12
6
0
0.0
10000
8000
T_C = 125_C
25_C
- 55_C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Capacitance
C_iss
0.03
0.02
V_GS = 1.8 V
V_GS = 2.5 V
0.01
0.00
0
V_GS = 4.5 V
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
4.5
V_DS = 6 V
3.6
I_D = 8.0 A
2.7
1.8
0.9
6000
4000
2000
C_oss
C_rss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
V_GS = 4.5 V
I_D = 8.0 A
1.2
V_GS = 1.8 V
I_D = 5.8 A
1.0
0.8
0.0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Document Number: 70829
S-59526—Rev. A, 19 Oct-98
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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