SI6467DQ Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

Si6467DQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 9.6 V, V_GS = 0 V
V_DS = - 9.6 V, V_GS = 0 V, T_J = 70_C
V_DS w - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 8.0 A
V_GS = - 2.5 V, I_D = - 7.0 A
V_GS = - 1.8 V, I_D = - 5.8 A
V_DS = - 5 V, I_D = - 8.0 A
I_S = - 1.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 6 V, V_GS = - 4.5 V, I_D = - 8.0 A
V_DD = - 6 V, R_L = 6 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - 1.5 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.45
V
"100
nA
-1
mA
- 25
- 20
A
0.0105
0.014
0.014
0.019
W
0.020
0.027
34
S
0.65
- 1.1
V
49
80
9
nC
6.5
40
70
50
100
220
400
ns
105
200
70
120
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Document Number: 70829
S-59526—Rev. A, 19 Oct-98