SI6467DQ Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si6467DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 12
r_DS(on) (W)
0.014 @ V_GS = - 4.5 V
0.019 @ V_GS = - 2.5 V
0.027 @ V_GS = - 1.8 V
I_D (A)
"8.0
"7.0
"5.8
TSSOP-8
D 1_D
S2
Si6467DQ
S3
G4
Top View
8D
7S
6S
5D
S_*
G
*Source Pins 2, 3, 6 and 7
must be tied common
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V_GS
"8
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
"8.0
"6.5
"30
- 1.5
1.5
1.0
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70829
S-59526—Rev. A, 19 Oct-98
t v 10 sec
Steady State
Symbol
R_thJA
Typical
90
Maximum
83
Unit
_C/W
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