SI6465DQ Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si6465DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.10
0.08
10
T_J = 150 °C
0.06
0.04
T_J = 25 °C
0.02
I_D = 8.8 A
1
0.00
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.3
I_D = 250 µA
0.2
0.1
0.0
- 0.1
- 0.2
- 50 - 25
2
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
50
40
30
20
10
0
0.01
0.1
1
10 30
Time (s)
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 90 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70812.
www.vishay.com
4
Document Number: 70812
S-80682-Rev. D, 31-Mar-08