SI6465DQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si6465DQ
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 µA
V_DS = 0 V, V_GS = ± 8 V
V_DS = - 6.4 V, V_GS = 0 V
V_DS = - 6.4 V, V_GS = 0 V, T_J = 70 °C
V_DS ≥ - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 8.8 A
V_GS = - 2.5 V, I_D = - 7.4 A
V_GS = - 1.8 V, I_D = - 6.0 A
V_DS = - 5 V, I_D = - 8.8 A
I_S = - 1.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = - 6 V, V_GS = - 4.5 V, I_D = - 8.8 A
V_DD = - 6 V, R_L = 6 Ω
I_D ≅ - 1 A, V_GEN = - 4.5 V, R_G = 6 Ω
I_F = - 1.5 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
- 0.45
- 20
0.009
0.0125
0.0185
34
- 0.65
± 100
-1
- 25
0.012
0.017
0.025
- 1.1
50
80
10
8
30
60
60
100
210
400
130
250
70
120
Unit
V
nA
µA
A
Ω
S
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 70812
S-80682-Rev. D, 31-Mar-08