SI6465DQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
V_GS = 5 thru 2 V
24
24
Si6465DQ
Vishay Siliconix
18
18
12
6
0
0
0.10
1.5 V
1V
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
12
6
0
0
10000
T_C = 125 °C
25 °C
- 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
0.06
8000
C_iss
6000
0.04
0.02
V_GS = 1.8 V
V_GS = 2.5 V
0
V_GS = 4.5 V
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
4.5
V_DS = 6 V
3.6
I_D = 8.8 A
2.7
1.8
0.9
4000
C_oss
2000
C_rss
0
0
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
V_GS = 4.5 V
I_D = 8.8 A
1.2
V_GS = 1.8 V
I_D = 6.0 A
1.0
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 70812
S-80682-Rev. D, 31-Mar-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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