SI6465DQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si6465DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.012 at V_GS = - 4.5 V
-8
0.017 at V_GS = - 2.5 V
0.025 at V_GS = - 1.8 V
I_D (A)
± 8.8
± 7.4
± 6.0
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFETs: 1.8 V Rated
RoHS
COMPLIANT
S*
D1
S2
S3
G4
TSSOP-8
Si6465DQ
Top View
8D
7S
6S
5D
Ordering Information: Si6465DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
* Source Pins 2, 3, 6 and 7
must be tied common
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-8
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
± 8.8
± 7.1
A
Pulsed Drain Current
I_DM
± 30
Continuous Source Current (Diode Conduction)^{a, b}
I_S
- 1.5
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
1.5
1.0
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
t ≤ 10 s
Steady State
Symbol
R_thJA
Typical
90
Maximum
83
Unit
°C/W
Document Number: 70812
S-80682-Rev. D, 31-Mar-08
www.vishay.com
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