SI6447DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si6447DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
1.0
10
0.8
T_J = 150_C
0.6
T_J = 25_C
0.4
0.2
I_D = 3.2 A
1
0.00
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.60
0.45
I_D = 250 mA
0.30
0.15
0.00
–0.15
–0.3
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
50
40
30
20
10
0
0.001
0.01
0.1
1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 83_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
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2-4
Document Number: 70170
S-00872—Rev. G, 01-May-00