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SI6447DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET
P-Channel 20-V (D-S) MOSFET
Si6447DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.09 @ VGS = –10 V
–20
0.16 @ VGS = –4.5 V
ID (A)
"3.2
"2.4
S*
TSSOP-8
D1D
S2
S3
Si6447DQ
G4
Top View
8D
7S
6S
5D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–20
"20
"3.2
"2.5
"20
–1.7
1.5
1.0
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
RthJA
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70170
S-00872—Rev. G, 01-May-00
Limit
83
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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