SI6447DQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si6447DQ
Vishay Siliconix
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –20 V, V_GS = 0 V
V_DS = –10 V, V_GS = 0 V, T_J = 70_C
V_DS = –5 V, V_GS = –10 V
V_DS = –5 V, V_GS = –4.5 V
V_GS = –10 V, I_D = 3.2 A
V_GS = –4.5 V, I_D = 2.0 A
V_DS = –15 V, I_D = –3.2 A
I_S = –1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –10 V, V_GS = –10 V, I_D = –3.2 A
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = –1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
–1.0
V
"100
nA
–1
mA
–5
–14
A
–2.5
0.060
0.09
W
0.100
0.16
4.0
S
–0.9
–1.2
V
15
25
3
nC
3.5
13
40
13
25
30
50
ns
13
20
50
100
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2-2
Document Number: 70170
S-00872—Rev. G, 01-May-00