SI6447DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si6447DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
V_GS = 5 thru 10 V
8
8
Transfer Characteristics
6
4V
4
2
0
0
0.30
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
4
2
0
0
1500
T_C = 125_C
25_C
–55_C
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.24
1200
0.18
0.12
V_GS = 4.5 V
0.06
V_GS = 10 V
0
0
4
8
12
16
20
I_D – Drain Current (A)
Gate Charge
10
V_DS = 10 V
8
I_D = 3.2 A
900
C_iss
600
C_oss
300
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.60
1.40
V_GS = 10 V
I_D = 3.2 A
6
1.20
4
1.00
2
0.80
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
0.60
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 70170
S-00872—Rev. G, 01-May-00
www.vishay.com S FaxBack 408-970-5600
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