SI6436DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Rated MOSFET

Si6436DQ
Typical Characteristics (25_C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.6
20
0.5
T_J = 150_C
10
0.4
0.3
T_J = 25_C
0.2
I_D = 4.4 A
0.1
1
0.52 0.62 0.72 0.82 0.92 1.02
V_SD – Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
0.3
0.2
0.1
–0.0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–50 –25
Threshold Voltage
I_D = 250 mA
0 25 50 75 100 125 150
T_J – Temperature (_C)
Single Pulse Power
50
40
30
20
10
0
0.001 0.01
0.1
1
10
100
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 83_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
10
Siliconix
S-49534—Rev. E, 06-Oct-97