SI6436DQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Rated MOSFET

Si6436DQ
Specifications (T_J = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 4.4 A
V_GS = 4.5 V, I_D = 3.0 A
V_DS = 15 V, I_D = 4.4 A
I_S = 1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 10 V, I_D = 4.4 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
1
V
"100 nA
1
mA
20
20
A
0.034 0.045
W
0.052 0.070
8
S
0.75
1.2
V
13
30
1.7
nC
3.7
12
30
10
25
25
30
ns
10
50
120
160
8
Siliconix
S-49534—Rev. E, 06-Oct-97