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SI6436DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Rated MOSFET
N-Channel 30-V (D-S) Rated MOSFET
Si6436DQ
Product Summary
VDS (V)
30
rDS(on) (W)
0.045 @ VGS = 10 V
0.070 @ VGS = 4.5 V
ID (A)
"4.4
"3.5
D
TSSOP-8
D1D
S2
Si6436DQ
S3
G4
Top View
8D
7S
6S
5D
*Source Pins 2, 3, 6 and 7
G
must be tied common.
S*
N-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
V
"20
"4.4
"3.5
A
"30
1.7
1.5
W
1.0
–55 to 150
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
RthJA
Limit
83
Unit
_C/W
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70169.
A SPICE Model data sheet is available for this product (FaxBack document #70535).
Siliconix
7
S-49534—Rev. E, 06-Oct-97