SI6436DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Rated MOSFET

Si6436DQ
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
40
V_GS = 9, 8, 7 V
Transfer Characteristics
20
30
6V
16
20
5V
10
0
0
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
4V
3, 2, 1 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
3
6
9
12
15
I_D – Drain Current (A)
12
8
T_C = 125_C
4
25_C
–55_C
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Capacitance
1600
1200
C_oss
800
400
0
0
C_iss
C_rss
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 15 V
I_D = 4.4 A
8
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 4.4 A
1.5
6
1.0
4
0.5
2
0
0
2
4
6
8
10 12
Q_g – Total Gate Charge (nC)
Siliconix
S-49534—Rev. E, 06-Oct-97
0
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
9