SI6421DQ Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si6421DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
Single Pulse Power, Junction-to-Ambient
0.3
160
0.2
0.1
I_D = 550 mA
120
- 0.0
80
- 0.1
- 0.2
40
- 0.3
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Time (sec)
100
Limited
by r_DS(on)
Safe Operating Area, Junction-to-Case
10
10 ms
1
100 ms
1s
10 s
0.1
T_C = 25_C
dc
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
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4
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 95_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 72125
S-03296—Rev. A, 03-Mar-03