SI6421DQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

Si6421DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 550 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 9.6 V, V_GS = 0 V
V_DS = - 9.6 V, V_GS = 0 V, T_J = 70_C
V_DS = - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 9.5 A
V_GS = - 2.5 V, I_D = - 8.5 A
V_GS = - 1.8 V, I_D = - 7.5 A
V_DS = - 15 V, I_D = - 9.5 A
I_S = - 1.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 10 V, V_GS = - 5 V, I_D = - 9.5 A
V_DD = - 10 V, R_L = 15 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - 1.5 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.40
- 0.8
V
"100
nA
-1
mA
- 10
20
A
0.008 0.0105
0.0105 0.0135
W
0.0135 0.0175
50
S
- 0.64
- 1.1
V
60
90
8
nC
16
4.3
W
46
70
92
140
235
350
ns
165
250
140
210
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 5 thru 2 V
32
32
1.5 V
24
24
Transfer Characteristics
16
8
1.0 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2
16
T_C = 125_C
8
25_C
- 55_C
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
V_GS - Gate-to-Source Voltage (V)
Document Number: 72125
S-03296—Rev. A, 03-Mar-03