SI6421DQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
Si6421DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
On-Resistance vs. Drain Current
6500
Capacitance
0.020
0.015
0.010
0.005
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
5200
3900
2600
1300
C_iss
C_rss
C_oss
0.000
0
6
12
18
24
30
I_D - Drain Current (A)
6
V_DS = 6 V
5
I_D = 9.5 A
Gate Charge
4
3
2
1
0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
1
T_J = 25_C
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 9.5 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
I_D = 9.5 A
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72125
S-03296—Rev. A, 03-Mar-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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