SI6421DQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
P-Channel 12-V (D-S) MOSFET
Si6421DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0105 @ V_GS = - 4.5 V
- 12
0.0135 @ V_GS = - 2.5 V
0.0175 @ V_GS = - 1.8 V
I_D (A)
- 9.5
- 8.5
- 7.3
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
S*
TSSOP-8
D 1_D
S2
Si6421DQ
S3
G4
Top View
8D
7S
6S
5D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 12
"8
- 9.5
- 7.5
- 7.5
-6
- 30
- 1.5
- 0.95
1.75
1.08
1.14
0.69
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72125
S-03296—Rev. A, 03-Mar-03
Symbol
R_thJA
R_thJF
Typical
55
95
38
Maximum
70
115
50
Unit
_C/W
www.vishay.com
1