SI5908DC Datasheet, PDF (4/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

Si5908DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.2
50
0.1
40
I_D = 250 mA
--0.0
30
--0.1
20
--0.2
--0.3
10
Single Pulse Power
--0.4
--50 --25
0 25 50 75 100 125 150
T_J -- Temperature (_C)
0
10^--4 10^--3
10^--2 10^--1
1
Time (sec)
10 100 600
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
10
P(t) = 0.0001
2
1
Duty Cycle = 0.5
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
T_A = 25_C
Single Pulse
0.01
BV_DSS Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.1
1
10
100
V_DS -- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.1
0.1
0.05
0.02
0.01
10^--4
Single Pulse
10^--3
10^--2
10^--1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM -- T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73074
S-41641—Rev. A, 06-Sep-04