SI5908DC Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

New Product
Si5908DC
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.040 @ V_GS = 4.5 V
20
0.045 @ V_GS = 2.5 V
0.052 @ V_GS = 1.8 V
I_D (A)
5.9
5.6
5.2
1206-8 ChipFETr
1
S₁
D₁
D₁
G₁
S₂
D₂
G₂
D₂
Bottom View
Marking Code
CC XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5908DC-T1—E3
FEATURES
D TrenchFETr Power MOSFETS
D Ultra Low r_DS(on) and Excellent Power
Handling In Compact Footprint
APPLICATIONS
D Load Switch
D PA Switch
D Battery Switch
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
8
5.9
4.4
4.2
3.1
20
1.8
0.9
2.1
1.1
1.1
0.6
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
50
90
30
Maximum
60
110
40
Unit
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73074
S-41641—Rev. A, 06-Sep-04
www.vishay.com
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