SI5908DC Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

New Product
Si5908DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
0.08
0.06
V_GS = 1.8 V
0.04
V_GS = 2.5 V
0.02
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D -- Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 4.4 A
4
Capacitance
800
700
600
C_iss
500
400
300
200
100
C_rss
0
0
4
C_oss
8
12
16
20
V_DS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 4.4 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
6
Q_g -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
10
T_J = 150_C
T_J = 25_C
0.6
--50 --25 0
25 50 75 100 125 150
T_J -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 2 A
0.04
I_D = 4.4 A
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD -- Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
V_GS -- Gate-to-Source Voltage (V)
Document Number: 73074
S-41641—Rev. A, 06-Sep-04
www.vishay.com
3