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SI5908DC Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET
Si5908DC
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = 8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 4.4 A
VGS = 2.5 V, ID = 4.1 A
VGS = 1.8 V, ID = 1.9 A
VDS = 10 V, ID = 4.4 A
IS = 0.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain
Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
N-Channel
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
IF = 0.9 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%,
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Min Typ Max Unit
0.4
1.0
V
100
nA
1
mA
5
20
A
0.032
0.040
0.036
0.045
Ω
0.042
0.052
22
S
0.8
1.2
V
5
7.5
0.85
nC
1
1.9
Ω
20
30
36
55
30
45
ns
12
20
45
90
Output Characteristics
20
VGS = 5 thru 2 V
16
12
1.5 V
8
4
1V
0
0
1
2
3
4
5
VDS -- Drain-to-Source Voltage (V)
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2
Transfer Characteristics
20
TC = --55_C
16
25_C
12
125_C
8
4
0
0.0
0.4
0.8
1.2
1.6
2.0
VGS -- Gate-to-Source Voltage (V)
Document Number: 73074
S-41641—Rev. A, 06-Sep-04