SI5476DU Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si5476DU
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.08
T_J = 150 _C
10
0.07
I_D = 4.6 A
0.06
T_A = 125 _C
0.05
T_J = 25 _C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
0.04
0.03
0.02
0
T_A = 25 _C
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
2.6
Single Pulse Power, Junction-to-Ambient
50
2.4
40
2.2
I_D = 250 mA
2.0
30
1.8
1.6
20
1.4
10
1.2
1.0
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001 0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-to-Ambient
100
*Limited by r_DS(on)
BVDSS Limited
100 1000
10
100 ms
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4
1 ms
1
10 ms
0.1
T_A = 25 _C
Single Pulse
0.01
100 ms
1s
10 s
dc
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Document Number: 73663
S–60219—Rev. A, 20-Feb-06