SI5476DU Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si5476DU
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Min Typ Max Unit
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_DS
DV_DS/T_J
DV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 1 mA
I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = " 20 V
V_DS = 60 V, V_GS = 0 V
V_DS = 60 V, V_GS = 0 V, T_J = 55 _C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 4.6 A
V_GS = 4.5 V, I_D = 4.2 A
V_DS = 15 V, I_D = 4.6 A
60
V
55
– 6.3
mV/_C
1
3
V
"100
ns
1
10
mA
25
A
0.028 0.034
0.033 0.041
W
20
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Total Gate Charge
Q_g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
b. Guaranteed by design, not subject to production testing.
V_DS = 30 V, V_GS = 0 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 4.6 A
V_DS = 30 V, V_GS = 4.5 V, I_D= 4.6 A
f = 1 MHz
V_DD = 30 V, R_L = 5.4 W
I_D ^ 5.6 A, V_GEN = 4.5 V, R_g = 1 W
V_DD = 30 V, R_L = 5.4 W
I_D ^ 5.6 A, V_GEN = 10 V, R_g = 1 W
T_C = 25 _C
I_S = 5.5 A, V_GS = 0 V
I_F = 5.5 A, di/dt = 100 A/ms, T_J = 25 _C
1100
90
pF
55
21
32
10.5
16
nC
3.5
4.2
3.3
W
20
30
150
225
20
30
60
90
10
15
ns
15
25
25
40
10
15
12
A
25
0.85
1.2
V
25
50
ns
25
50
nC
19
ns
6
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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Document Number: 73663
S–60219—Rev. A, 20-Feb-06