SI5476DU Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

New Product
Si5476DU
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
25
5
V_GS = 10 thru 4 V
20
4
Transfer Characteristics
T_C = – 55 _C
15
10
5
V_GS = 3 V
3
T_C = 125 _C
2
1
T_C = 25 _C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0.040
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
1500
Capacitance
0.036
0.032
0.028
V_GS = 4.5 V
V_GS = 10 V
0.024
0
5
10
15
20
25
I_D – Drain Current (A)
10
I_D = 4.6 A
8
Gate Charge
6
V_DS = 30 V
V_DS = 48 V
4
2
0
0
5
10
15
20
25
Q_g – Total Gate Charge (nC)
Document Number: 73663
S–60219—Rev. A, 20-Feb-06
1200
C_iss
900
600
300
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.8
V_GS = 10 V
I_D = 4.6 A
1.6
1.4
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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