SI4992EY Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual N-Channel 75-V (D-S) MOSFET

Si4992EY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
650
0.4
50
0.2
I_D = 250 mA
40
--0.0
--0.2
30
--0.4
20
--0.6
10
--0.8
--1.0
--50 --25
0 25 50 75 100 125 150 175
T_J -- Temperature (_C)
0
0.001
Single Pulse Power
0.01 0.1
1
10
Time (sec)
Safe Operating Area
100
r_DS(on) Limited
I_DM Limited
10
P(t) = 0.0001
100 600
1
I_D(on)
Limited
0.1
T_A = 25_C
Single Pulse
0.01
0.1
BV_DSS Limited
1
10
V_DS -- Drain-to-Source Voltage (V)
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^--4
Single Pulse
10^--3
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4
10^--2
10^--1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 85_C/W
3. T_JM -- T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 73082
S-41640—Rev. A, 06-Sep-04