SI4992EY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 75-V (D-S) MOSFET

New Product
Si4992EY
Vishay Siliconix
Dual N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.048 @ V_GS = 10 V
75
0.062 @ V_GS = 4.5 V
I_D (A)
4.8
4.2
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D High-Efficiency PWM Optimized
APPLICATIONS
D Automotive Such As:
-- High-Side Switch
-- Motor Drives
-- 42-V Battery
D₁
D₂
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4992EY—E3
Si4992EY-T1—E3 (with Tape and Reel)
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^a
Continuous Source Current^a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤1%)
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
L = 0.1 mH
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
75
20
4.8
3.6
3.7
2.8
2
1.1
20
8
3.2
2.4
1.4
1.4
0.8
--55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t ≤ 10 sec
Steady State
Steady State
Document Number: 73082
S-41640—Rev. A, 06-Sep-04
Symbol
R_thJA
R_thJF
Typical
50
85
31
Maximum
62.5
110
37
Unit
_C/W
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