SI4992EY Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 75-V (D-S) MOSFET

New Product
Si4992EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
4
8
12
16
20
900
800
700
600
500
400
300
200
100
0
0.0
Capacitance
C_iss
C_rss
C_oss
12.5 25.0 37.5 50.0 62.5 75.0
I_D -- Drain Current (A)
V_DS -- Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 50 V
I_D = 4.8 A
8
On-Resistance vs. Junction Temperature
2.2
2.0
V_GS = 10 V
I_D = 4.8 A
1.8
6
1.6
1.4
4
1.2
1.0
2
0.8
0
0
3
6
9
12
15
Q_g -- Total Gate Charge (nC)
0.6
--50 --25
0 25 50 75 100 125 150 175
T_J -- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 175_C
10
0.08
I_D = 4.8 A
0.06
0.04
T_J = 25_C
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD -- Source-to-Drain Voltage (V)
Document Number: 73082
S-41640—Rev. A, 06-Sep-04
0.00
0
2
4
6
8
10
V_GS -- Gate-to-Source Voltage (V)
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