SI4992EY Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual N-Channel 75-V (D-S) MOSFET

Si4992EY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = 20 V
V_DS = 75 V, V_GS = 0 V
V_DS = 75 V, V_GS = 0 V, T_J = 85_C
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 4.8 A
V_GS = 4.5 V, I_D = 4.2 A
V_DS = 15 V, I_D = 4.8 A
I_S = 2.4 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 38 V, V_GS = 10 V, I_D = 4.8 A
f = 1 MHz
V_DD = 38 V, R_L = 38 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
I_F = 2.4 A, di/dt = 100 A/ms
Min Typ Max Unit
1
3
V
100
nA
1
mA
20
20
A
0.039
0.048
Ω
0.050
0.062
16
S
0.8
1.2
V
14
21
2.4
nC
3.5
3.6
Ω
7
15
10
15
22
35
ns
10
15
25
50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
V_GS = 10 thru 5 V
16
Output Characteristics
4V
12
8
4
0
0
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2
3V
1
2
3
4
5
V_DS -- Drain-to-Source Voltage (V)
Transfer Characteristics
20
16
12
8
T_C = 150_C
4
25_C
--55_C
0
0
1
2
3
4
5
V_GS -- Gate-to-Source Voltage (V)
Document Number: 73082
S-41640—Rev. A, 06-Sep-04