SI4967DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET

Si4967DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
0.08
10
0.06
T_J = 25_C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.3
I_D = 250 mA
0.2
0.1
0.0
- 0.1
0.04
0.02
0.00
0
30
25
20
15
10
5
I_D = 7.5 A
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 93_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 70813
S-31989—Rev. C, 13-Oct-03