SI4967DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET

Si4967DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 5 thru 2.5V
2V
24
24
Transfer Characteristics
18
18
12
1.5 V
6
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10
0.08
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
0.00
0
V_GS = 4.5 V
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
5
V_DS = 6 V
4
I_D = 7.5 A
3
12
6
T_C = 125_C
25_C
- 55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
7000
Capacitance
6000
C_iss
5000
4000
3000
2000
C_oss
1000
C_rss
0
0
3
6
9
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.5
V_GS = 4.5 V
I_D = 7.5 A
1.2
2
0.9
1
0
0
8
16
24
32
40
Q_g - Total Gate Charge (nC)
Document Number: 70813
S-31989—Rev. C, 13-Oct-03
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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