SI4967DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET

Si4967DY
Vishay Siliconix
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 12 V, V_GS = 0 V
V_DS = - 12 V, V_GS = 0 V, T_J = 70_C
V_DS w - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 7.5 A
V_GS = - 2.5 V, I_D = - 6.7 A
V_GS = - 1.8 V, I_D = - 5.4 A
V_DS = - 10 V, I_D = - 7.5 A
I_S = - 1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 6 V, V_GS = - 10 V, I_D = - 7.5 A
V_DD = - 6 V, R_L = 10 W
I_D ^ - 1 A, V_GEN = - 10 V, R_G = 6 W
I_F = - 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.45
V
"100
nA
-1
mA
-5
- 20
A
0.019
0.023
0.024
0.030
W
0.033
0.045
27
S
0.7
- 1.2
V
35
55
7
nC
7
25
50
40
80
210
350
ns
95
150
50
80
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2
Document Number: 70813
S-31989—Rev. C, 13-Oct-03