SI4967DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET

Si4967DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
- 12
r_DS(on) (W)
0.023 @ V_GS = - 4.5 V
0.030 @ V_GS = - 2.5 V
0.045 @ V_GS = - 1.8 V
I_D (A)
- 7.5
- 6.7
- 5.4
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4967DY
Si4967DY-T1 (with Tape and Reel)
S₁
G₁
S₂
G₂
D₁ D₁
P-Channel MOSFET
D₂ D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V_GS
"8
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
- 7.5
- 6.1
- 30
- 1.7
2.0
1.3
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board.
b. t v10 sec.
Document Number: 70813
S-31989—Rev. C, 13-Oct-03
t v 10 sec
Steady State
Symbol
R_thJA
Typical
93
Maximum
62.5
Unit
_C/W
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