SI4943CDY Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si4943CDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.04
0.03
10
0.02
T_J = 150 °C
1
T_J = 25 °C
0.01
I_D = 8.3 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.5
2.3
2.1
I_D = 250 µA
1.9
1.7
1.5
0
0
4
8
12
16
20
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
1.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
10
1 ms
10 ms
1
100 ms
0.1
0.01
0.1
T_A = 25 °C
Single Pulse
1
BVDSS
Limited
10
1s
10 s
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09