SI4943CDY Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Dual P-Channel 20-V (D-S) MOSFET
Si4943CDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 20
0.0192 at V_GS = - 10 V
0.0330 at V_GS = - 4.5 V
I_D (A)^{a, e}
-8
-8
Q_g (Typ.)
20
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switching
- Computer
- Game Systems
S₁
S₂
• Battery Switching
- 2-Cell Li-Ion
G₁
G₂
Top View
Ordering Information: Si4943CDY-T1-E3 (Lead (Pb)-free)
Si4943CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
V_DS
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
- 20
V
± 20
- 8^e
- 8^e
- 8^{b, c, e}
- 6.7^{b, c}
- 30
A
Source-Drain Current Diode Current
Pulsed Sorce-Drain Current
T_C = 25 °C
T_A = 25 °C
I_S
I_SM
- 2.5
- 1.7^{b, c}
- 30
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
- 11
6
mJ
T_C = 25 °C
3.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2
2^{b, c}
W
T_A = 70 °C
1.28^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 50 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
t ≤ 10 s
Steady State
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
Symbol
R_thJA
R_thJF
Limit
Typical
Maximum
50
62.5
30
40
Unit
°C/W
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