SI4943CDY Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
8
V_GS = 10 V thru 5 V
24
6
V_GS = 4 V
18
4
12
6
0
0
0.08
V_GS = 2 V
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
0
0
3000
Si4943CDY
Vishay Siliconix
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
0.04
V_GS = 4.5 V
0.02
V_GS = 10 V
0.00
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 8.3 A
8
V_DS = 10 V
6
V_DS = 16 V
4
2
2400
C_iss
1800
1200
C_oss
600
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
V_GS = 10 V, I_D = 8.3 A
1.3
1.1
V_GS = 4.5 V, I_D = 6.4 A
0.9
0
0
10
20
30
40
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69985
S09-0704-Rev. B, 27-Apr-09
www.vishay.com
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