SI4812BDY-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4812BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
0.05
T_J = 150 °C
10
T_J = 25 °C
1
0.04
0.03
0.02
0.01
I_D = 9.5 A
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
1
40
0.1
30 V
30
0.01
20
0.001
20 V
0.0001
10 V
10
0.00001
0
25
50
75
100 125 150
T_J - Junction Temperature (°C)
Reverse Current (Schottky)
100
0
0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power (MOSFET)
Limited by
R_DS(on)*
10
1
0.1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
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4
Document Number: 73038
S-83039-Rev. D, 29-Dec-08