SI4812BDY-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4812BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω)
0.016 at V_GS = 10 V
0.021 at V_GS = 4.5 V
I_D (A)
9.5
7.7
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.50 V at 1.0 A
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
I_F (A)
1.4
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT^® Plus Power MOSFET
• 100 % R_g Tested
D
Schottky Diode
G
Top View
Ordering Information: Si4812BDY-T1-E3 (Lead (Pb)-free)
Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Limit
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
V_DS
30
30
V
Gate-Source Voltage (MOSFET)
V_GS
± 20
Continuous Drain Current (T_J = 150 °C) (MOSFET)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
9.5
7.7
7.3
5.9
Pulsed Drain Current (MOSFET)
I_DM
50
Continuous Source Current (MOSFET Diode Conduction)^{a, b}
I_S
2.1
1.2
A
Average Forward Current (Schottky)
I_F
1.4
0.8
Pulsed Forward Current (Schottky)
I_FM
30
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
I_AS
5
E_AS
1.25
mJ
Maximum Power Dissipation (MOSFET)^{a, b}
Maximum Power Dissipation (Schottky)^{a, b}
T_A = 25 °C
T_A = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
2.5
1.6
2.0
1.3
1.4
0.9
W
1.2
0.8
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t ≤ 10 s)^a
Maximum Junction-to-Ambient (t = Steady State)^a
Maximum Junction-to-Foot (t = Steady State)^a
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 73038
S-83039-Rev. D, 29-Dec-08
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
R_thJA
R_thJF
Typical
40
50
72
85
18
24
Maximum
50
60
90
100
23
30
Unit
°C/W
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