SI4812BDY-E3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
V_GS = 10 thru 4 V
40
40
Si4812BDY
Vishay Siliconix
30
30
20
10
0
0
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
6
5
4
3
2
1
0
0
3V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS = 4.5 V
V_GS = 10 V
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS = 15 V
I_D = 9.5 A
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
20
10
0
0.0
T_C = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1300
C_iss
1040
780
520
C_oss
260
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
1.4
I_D = 9.5 A
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73038
S-83039-Rev. D, 29-Dec-08
www.vishay.com
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