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SI4483EDY Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET | |||
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Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
50
0.6
40
ID = 250 mA
0.4
30
0.2
20
0.0
10
â0.2
Single Pulse Power
â0.4
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.01
0.1
Safe Operating Area, Junction-to-Case
100
1
10
Time (sec)
100 600
*Limited by rDS(on)
10
1
0.1
TC = 25_C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
2
1
Duty Cycle = 0.5
0.01
0.1
1
10
100
VDS â Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
10â2
10â1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72862
S-42139âRev. B, 15-Nov-04
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