SI4483EDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si4483EDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0085 @ V_GS = −10 V
−30
0.014 @ V_GS = −4.5 V
I_D (A)
−14
−11
FEATURES
D TrenchFETr Power MOSFET
D ESD Protection: 3000 V
APPLICATIONS
D Notebook PC
− Load Switch
− Adapter Switch
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4483EDY-T1—E3
S
G
7100 W
P-Channel
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−30
"25
−14
−10
−11
−8
−50
−2.7
−1.36
3.0
1.5
1.9
0.95
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
33
70
16
Maximum
42
85
21
Unit
_C/W
www.vishay.com
1