SI4483EDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
V_GS = 10 thru 4 V
40
3V
40
Transfer Characteristics
30
30
20
10
0
0
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
0.020
On-Resistance vs. Drain Current
20
10
0
0.0
T_C = 125_C
25_C
−55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS − Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
0.016
1.4
0.012
V_GS = 4.5 V
1.2
0.008
V_GS = 10 V
1.0
0.004
0.8
0.000
0
50
10
20
30
40
50
I_D − Drain Current (A)
Source-Drain Diode Forward Voltage
T_J = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
I_D = 14 A
1
0.02
T_J = 25_C
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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