SI4483EDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4483EDY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = −250 mA
−1.0
3.0
V
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = "4.5 V
V_DS = 0 V, V_GS = "25 V
"1
mA
"10
mA
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = −30 V, V_GS = 0 V
V_DS = −30 V, V_GS = 0 V, T_J = 70_C
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −14 A
V_GS = −4.5 V, I_D = −11 A
V_DS = −15 V, I_D = −14 A
I_S = −2.7 A, V_GS = 0 V
−1
mA
−10
−30
A
0.007
0.0085
W
0.0115
0.014
60
S
−0.74
−1.1
V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DD = −15 V, R_L = 15 W
I_D ^ −1 A, V_GEN = −10 V, R_g = 6 W
10
15
20
30
ms
42
65
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8
6
4
2
0
0
5
10
15
20
25
30
V_GS − Gate-to-Source Voltage (V)
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2
Gate Current vs. Gate-Source Voltage
100
10
T_J = 150_C
1
0.1
T_J = 25_C
0.01
0.001
0.0001
0
6
12
18
24
30
V_GS − Gate-to-Source Voltage (V)
Document Number: 72862
S-42139—Rev. B, 15-Nov-04