SI4465DY-T1 Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si4465DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
0.04
T_J = 150_C
10
T_J = 25_C
0.03
0.02
0.01
I_D = 14 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.3
I_D = 250 mA
0.2
0.1
0.0
–0.1
Single Pulse Power
50
40
30
20
10
–0.2
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
www.vishay.com
4
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 80_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 70830
S-51472—Rev. C, 01-Aug-05