SI4465DY-T1 Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si4465DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 5 thru 2 V
32
32
24
1.5 V
24
Transfer Characteristics
16
8
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
0.03
0.02
0.01
V_GS = 1.8 V
V_GS = 2.5 V
0.00
0
V_GS = 4.5 V
8
16
24
32
40
I_D – Drain Current (A)
Gate Charge
5
V_DS = 4 V
4
I_D = 14 A
3
2
1
0
0
20
40
60
80
Q_g – Total Gate Charge (nC)
Document Number: 70830
S-51472—Rev. C, 01-Aug-05
16
T_C = 125_C
8
25_C
–55_C
0
0.0
0.5
1.0
1.5
2.0
V_GS – Gate-to-Source Voltage (V)
14000
Capacitance
12000
C_iss
10000
8000
6000
4000
C_oss
2000
C_rss
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
1.3
V_GS = 4.5 V
I_D = 14 A
1.2
1.1
1.0
0.9
0.8
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
www.vishay.com
3