SI4465DY-T1 Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si4465DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = –8 V, V_GS = 0 V
V_DS = –8 V, V_GS = 0 V, T_J = 55_C
V_DS w –5 V, V_GS = –4.5 V
V_GS = –4.5 V, I_D = –14 A
V_GS = –2.5 V, I_D = –12 A
V_GS = –1.8 V, I_D = –10 A
V_DS = –10 V, I_D = –14 A
I_S = –2.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_G
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –4 V, V_GS = –4.5 V, I_D = –14 A
V_DD = –4 V, R_L = 4 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
I_F = –2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
–0.45
–1.0
V
"100
nA
–1
mA
–5
–20
A
0.007
0.009
0.009
0.011
W
0.012
0.016
60
S
0.7
–1.2
V
80
120
15
nC
9
3.3
5
W
45
90
55
110
380
760
ns
190
380
80
120
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2
Document Number: 70830
S-51472—Rev. C, 01-Aug-05