SI4465DY-T1 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si4465DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
–8
r_DS(on) (W)
0.009 @ V_GS = –4.5 V
0.011 @ V_GS = –2.5 V
0.016 @ V_GS = –1.8 V
I_D (A)
–14
–12
–10
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4465DY-T1
Si4465DY-T1–E3 (Lead (Pb)–free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
–8
V_GS
"8
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
–14
–11
–40
–2.1
2.5
1.6
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board.
b. t v10 sec.
Document Number: 70830
S-51472—Rev. C, 01-Aug-05
t v 10 sec
Steady State
Symbol
R_thJA
Typical
80
Maximum
50
Unit
_C/W
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